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| www..com STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESHTM Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP VDSS 450V 450V RDS(on) <4.5 <4.5 ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK TO-92 (ammopak) Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram Applications Switching application - Switch mode low power supplies (SMPS) - Low power, low cost CFL (compact fluorescent lamps) - Low power battery chargers Order codes Part number STD2NC45-1 STQ1NC45R-AP Marking D2NC45 Q1NC45R Package IPAK TO-92 Packaging Tube Ammopak July 2006 Rev 3 1/15 www.st.com 15 www..com Contents STD2NC45-1 - STQ1NC45R-AP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 www..com STD2NC45-1 - STQ1NC45R-AP Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Value Parameter IPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 1.5 0.95 6 30 0.24 3 -65 to 150 Max. operating junction temperature C 450 30 0.5 0.315 2 3.1 0.025 TO-92 V V A A A W W/C V/ns C Unit PTOT (2) dv/dt Peak diode recovery voltage slope Storage temperature Tstg Tj 1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/s, VDD =80% V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Rthj-lead Tl Thermal data Value Parameter IPAK Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-lead max Maximum lead temperature for soldering purpose 4.1 100 -275 TO-92 -120 40 260 C/W C/W C/W C Unit Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ 3/15 www..com Electrical characteristics STD2NC45-1 - STQ1NC45R-AP 2 Electrical characteristics (TCASE = 25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 100 3.7 4.5 Typ. Max. Unit V A A nA V Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7 (see Figure 18) 10 1. Pulsed: pulse duration = 300 s, duty cycle 1.5 % 4/15 www..com STD2NC45-1 - STQ1NC45R-AP Electrical characteristics Table 6. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test condictions VDD = 225V, ID = 0.5A RG = 4.7 VGS = 10V (see Figure 17) VDD = 360V, ID = 1.5A, RG = 4.7, VGS = 10V (see Figure 17) Min. Typ. 6.7 4 8.5 12 18 Max. Unit ns ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, VGS = 0 ISD = 1.5A, di/dt = 100A/s VDD = 100V, Tj = 150C (see Figure 22) 225 530 4.7 Test condictions Min Typ. Max Unit 1.5 6.0 1.6 A A V ns C A VSD (2) trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5 % 5/15 www..com Electrical characteristics STD2NC45-1 - STQ1NC45R-AP 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for IPAK Figure 2. Thermal impedance for IPAK Figure 3. Safe operating area for TO-92 Figure 4. Thermal impedance for TO-92 Figure 5. Output characterisics Figure 6. Transfer characteristics 6/15 www..com STD2NC45-1 - STQ1NC45R-AP Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/15 www..com Electrical characteristics Figure 13. Source-drain diode forward characteristics STD2NC45-1 - STQ1NC45R-AP Figure 14. Normalized BVDSS vs temperature Figure 15. Max Id current vs Temperature Figure 16. Maximum avalanche energy vs temperature 8/15 www..com STD2NC45-1 - STQ1NC45R-AP Test circuit 3 Test circuit Figure 18. Gate charge test circuit Figure 17. Switching times test circuit for resistive load Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/15 www..com Package mechanical data STD2NC45-1 - STQ1NC45R-AP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 www..com STD2NC45-1 - STQ1NC45R-AP Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 11/15 www..com Package mechanical data STD2NC45-1 - STQ1NC45R-AP TO-92 MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch 12/15 www..com STD2NC45-1 - STQ1NC45R-AP Package mechanical data TO-92 AMMOPACK mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TYP. MAX. 0.194 0.155 0.06 0.09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 13/15 www..com Revision history STD2NC45-1 - STQ1NC45R-AP 5 Revision history Table 8. Date 21-Jun-2004 12-Jul-2006 Revision history Revision 2 3 Complete version New template Changes 14/15 www..com STD2NC45-1 - STQ1NC45R-AP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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